Silicon carbide semiconductor device and method of manufacturing thereof

ABSTRACT

A silicon carbide semiconductor device is provided that includes a semiconductor layer made of silicon carbide and having a surface with a trench having a sidewall formed of a crystal plane tilted at an angle in a range of not less than 50° and not more than 65° relative to the {0001} plane, and an insulating film formed to contact the sidewall of the trench. A maximum value of the nitrogen concentration in a region within 10 nm from the interface between the sidewall of the trench and the insulating film is not less than 1×10 21  cm −3 , and the semiconductor device has a channel direction in a range of ±10° relative to the direction orthogonal to the &lt;−2110&gt; direction in the sidewall of the trench. A method of manufacturing the silicon carbide semiconductor device is also provided.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of U.S. application Ser. No.13/130,986, filed on May 24, 2011, which is a 371 National StageApplication of International Application No. PCT/JP2010/051034 filedJan. 27, 2010. The contents of the foregoing applications areincorporated herein by reference.

TECHNICAL FIELD

The present invention relates to a silicon carbide semiconductor deviceand a method of manufacturing thereof, and particularly to a siliconcarbide semiconductor device exhibiting excellent electricalcharacteristics and a method of manufacturing thereof.

BACKGROUND ART

Conventionally, silicon carbide semiconductor devices in which siliconcarbide (SiC) is used have been known, and an example of them isdisclosed in International Patent Publication WO01/018872 (hereinafter“Patent Document 1”) for example. Patent Document 1 discloses a MOS-typefield effect transistor (MOSFET) that is formed as a silicon carbidesemiconductor device using an SiC substrate of the 4H polytype having asurface orientation of substantially {03-38}. According to PatentDocument 1 disclosing the MOSFET, a gate oxide film is formed by dryoxidation and a high channel mobility (about 100 cm²/Vs) can beachieved.

PRIOR ART DOCUMENTS Patent Documents Patent Document 1: InternationalPatent Publication WO01/018872 SUMMARY OF THE INVENTION Problems to beSolved by the Invention

In order for a silicon carbide semiconductor device in which SiC is usedto stably exhibit its excellent electrical characteristics, it isrequired to achieve a high channel mobility with high reproducibility.

The inventors of the present invention have conducted studies to found,however, that even the MOSFET disclosed in Patent Document 1 may nothave a sufficiently high channel mobility depending on the case.

In view of the circumstances above, an object of the present inventionis to provide a silicon carbide semiconductor device capable ofachieving a high channel mobility with high reproducibility, and amethod of manufacturing the same.

Means for Solving the Problems

The present invention is a silicon carbide semiconductor deviceincluding: a semiconductor layer made of silicon carbide and having asurface with a trench having a sidewall formed of a crystal plane tiltedat an angle in a range of not less than 50° and not more than 65°relative to a {0001} plane; and an insulating film formed to contact thesidewall of the trench, a maximum value of a nitrogen concentration in aregion within 10 nm from an interface between the sidewall of the trenchand the insulating film is not less than 1×10²¹ cm⁻³, and the siliconcarbide semiconductor device has a channel direction in a range of ±10°relative to a direction orthogonal to a <−2110> direction in thesidewall of the trench.

Further, the present invention is a silicon carbide semiconductor deviceincluding: a substrate made of silicon carbide of a first conductivetype; a semiconductor layer made of silicon carbide of the firstconductive type, formed on the substrate, containing afirst-conductive-type impurity of a lower concentration than thesubstrate, and having a surface with a trench having a sidewall formedof a crystal plane tilted at an angle in a range of not less than 50°and not more than 65° relative to a {0001} plane; asecond-conductive-type impurity diffusion layer formed in the sidewallof the trench; a first-conductive-type impurity diffusion layer formedin the surface of the semiconductor layer; an insulating film formed tocontact the sidewall of the trench; a source electrode formed to contactat least a part of a region, except for a portion where the insulatingfilm is formed, of the surface of the semiconductor layer; a gateelectrode formed on the insulating film; and a drain electrode formed ona surface of the substrate opposite to a surface of the substrate onwhich the semiconductor layer is formed. A maximum value of a nitrogenconcentration in a region within 10 nm from an interface between thesidewall of the trench and the insulating film is not less than 1×10²¹cm⁻³, and the silicon carbide semiconductor device has a channeldirection in a range of ±10° relative to a direction orthogonal to a<−2110> direction in the sidewall of the trench.

Preferably, in the silicon carbide semiconductor device of the presentinvention, the source electrode has a surface in a stripe pattern.

Preferably, in the silicon carbide semiconductor device of the presentinvention, the source electrode has a surface in a honeycomb pattern.

Preferably, in the silicon carbide semiconductor device of the presentinvention, the sidewall of the trench is formed of a crystal planetilted at an angle of ±5° relative to a {03-38} plane.

Further, the present invention is a method of manufacturing a siliconcarbide semiconductor device, including the steps of: forming a trenchhaving a sidewall formed of a crystal plane tilted at an angle in arange of not less than 50° and not more than 65° relative to a {0001}plane, in a surface of a semiconductor layer made of silicon carbide;forming an insulating film contacting the sidewall of the trench so thata channel direction is set in a range of ±10° relative to a directionorthogonal to a <−2110> direction in the sidewall of the trench; andadjusting a nitrogen concentration so that a maximum value of thenitrogen concentration in a region within 10 nm from an interfacebetween the sidewall of the trench and the insulating film is not lessthan 1×10²¹ cm⁻³.

Preferably, regarding the method of manufacturing a silicon carbidesemiconductor device of the present invention, the channel direction isset in a range of ±10° relative to the direction orthogonal to the<−2110> direction in the sidewall of the trench, based on an orientationof a defect included in the semiconductor layer.

Preferably, regarding the method of manufacturing a silicon carbidesemiconductor device of the present invention, the step of adjusting thenitrogen concentration includes the step of performing a heat treatmentin an atmosphere of a gas containing nitrogen, on the semiconductorlayer where the insulating film is formed.

Preferably, regarding the method of manufacturing a silicon carbidesemiconductor device of the present invention, the step of adjusting thenitrogen concentration includes the step of performing, on thesemiconductor layer having undergone the heat treatment, a heattreatment in an atmosphere of an inert gas.

Effects of the Invention

The present invention can provide a silicon carbide semiconductor devicethat can achieve a high channel mobility with high reproducibility, aswell as a method of manufacturing the same.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic cross section of an example of a vertical trenchgate MOSFET that is an example of the silicon carbide semiconductordevice of the present invention.

FIG. 2 is a schematic plan view of the silicon carbide semiconductordevice shown in FIG. 1 as seen from a gate electrode side.

FIG. 3 is a schematic cross section illustrating a part of amanufacturing process of an example of the method of manufacturing asilicon carbide semiconductor device of the present invention.

FIG. 4 is a schematic cross section illustrating a part of themanufacturing process of an example of the method of manufacturing asilicon carbide semiconductor device of the present invention.

FIG. 5 is a schematic plan view illustrating an example of a surface ofa semiconductor layer of the present invention.

FIG. 6 is a schematic cross section illustrating a part of themanufacturing process of an example of the method of manufacturing asilicon carbide semiconductor device of the present invention.

FIG. 7 is a schematic cross section illustrating a part of themanufacturing process of an example of the method of manufacturing asilicon carbide semiconductor device of the present invention.

FIG. 8 is a schematic cross section illustrating a part of themanufacturing process of an example of the method of manufacturing asilicon carbide semiconductor device of the present invention.

FIG. 9 is a schematic plan view illustrating an example of the sidewallof a trench in the present invention.

FIG. 10 is a schematic perspective view illustrating an example of acrystal plane of the sidewall of the trench in the present invention.

FIG. 11 is a schematic cross section illustrating a preferred example ofthe crystal plane of the sidewall of the trench in the presentinvention.

FIG. 12 is a schematic cross section illustrating a part of themanufacturing process of an example of the method of manufacturing asilicon carbide semiconductor device of the present invention.

FIG. 13 is a schematic cross section illustrating a part of themanufacturing process of an example of the method of manufacturing asilicon carbide semiconductor device of the present invention.

FIG. 14 is a schematic plan view of another example of the siliconcarbide semiconductor device of the present invention as seen from thegate electrode side.

FIG. 15 is a diagram showing an example of a nitrogen concentrationdistribution in the vicinity of the interface between the sidewall of atrench and an insulating film in an example of the silicon carbidesemiconductor device of the present invention.

FIG. 16 is a diagram showing an example of the relation between an angle(°) relative to the <−2110> direction and a channel mobility (relativevalue) in the sidewall of the trench in an example of the siliconcarbide semiconductor device of the present invention.

MODES FOR CARRYING OUT THE INVENTION

An embodiment of the present invention will hereinafter be described. Inthe drawings of the present invention, the same reference charactersdenote the same or corresponding parts.

Where crystal plane and direction are to be expressed, they shouldactually be expressed with a bar on a required number. Because ofrestricted expression means, however, they are expressed in the presentinvention with “-” added before a required number instead of a bar onthe required number. Further, in the present invention, an individualorientation is denoted in [ ], a group orientation is denoted in < >, anindividual plane is denoted in ( ), and a group plane is denoted in { }.

FIG. 1 shows a schematic cross section of an example of a verticaltrench gate MOSFET (Metal Oxide Semiconductor Field Effect Transistor)that is an example of the silicon carbide semiconductor device of thepresent invention.

A silicon carbide semiconductor device 1 shown in FIG. 1 includes asubstrate 11 made of silicon carbide of n type and 4H-SiC polytype forexample, a semiconductor layer 12 made of silicon carbide of n typeformed on a surface 11 a of substrate 11, a trench 20 formed in asurface 12 a of semiconductor layer 12, a second-conductive-typeimpurity diffusion layer 14 that is a p-type region formed in surface 12a of semiconductor layer 12, a first-conductive-type impurity diffusionlayer 15 that is an n-type region formed in a surface ofsecond-conductive-type impurity diffusion layer 14 (also in surface 12 aof semiconductor layer 12), an insulating film 13 formed on a part ofsurface 12 a of semiconductor layer 12 to contact a sidewall 19 oftrench 20, a source electrode 16 formed in a region of surface 12 a ofsemiconductor layer 12 other than a region where insulating film 13 isformed, a gate electrode 17 formed on a surface of insulating film 13,and a drain electrode 18 formed on the back surface of substrate 11.

Here, as surface 11 a of substrate 11 on which semiconductor layer 12 isformed, a crystal plane that is a {04-4-3} plane for example may beused.

Further, as semiconductor layer 12, a layer such as a layer made ofsilicon carbide of n type having a lower n-type impurity concentrationthan substrate 11 for example may be used.

Further, sidewall 19 of trench 20 formed in surface 12 a ofsemiconductor layer 12 is formed of a crystal plane tilted at an anglein a range of not less than 50° and not more than 65° relative to the{0001} plane.

Further, as insulating film 13, a film such as an oxide film formed forexample by dry oxidation (thermal oxidation) or the like may be used.Insulating film 13 is not limited to a single-layer structure, and maybe of a structure including two or more layers.

Further, as second-conductive-type impurity diffusion layer 14, a layersuch as a p-type region may be used that is formed by diffusing a p-typeimpurity serving as a second-conductive-type impurity in surface 12 a ofsemiconductor layer 12, for example. Here, as the p-type impurityserving as a second-conductive-type impurity, aluminum, boron, or thelike may be used, for example. Furthermore, in at least a part of aregion excluding the region where first-conductive-type impuritydiffusion layer 15 is formed in the surface of second-conductive-typeimpurity diffusion layer 14, a p+-type region containing a p-typeimpurity serving as a second-conductive-type impurity and having ahigher concentration than second-conductive-type impurity diffusionlayer 14 may be formed.

Further, as first-conductive-type impurity diffusion layer 15, a layersuch as an n-type region that is formed by diffusing an n-type impurityserving as a first-conductive-type impurity in surface 12 a ofsemiconductor layer 12 may be used, for example. The n-type impurityconcentration of first-conductive-type impurity diffusion layer 15 maybe made higher than the n-type impurity concentration of semiconductorlayer 12. Here, as the n-type impurity serving as afirst-conductive-type impurity, nitrogen, phosphorous or the like may beused, for example.

Further, for source electrode 16, gate electrode 17, and drain electrode18 each, a conventionally known metal or the like may be used, forexample.

In silicon carbide semiconductor device 1 shown in FIG. 1, a maximumvalue of the nitrogen concentration in a region within 10 nm from theinterface between sidewall 19 of trench 20 and insulating film 13 is notless than 1×10²¹ cm⁻³. Here, the region within 10 nm from the interfacebetween sidewall 19 of trench 20 and insulating film 13 refers to aregion made up of: a region extending from the interface betweensidewall 19 of trench 20 and insulating film 13 perpendicularly to theinterface toward sidewall 19 side of trench 20 by 10 nm, and a regionextending from the interface between sidewall 19 of trench 20 andinsulating film 13 perpendicularly to the interface toward insulatingfilm 13 side by 10 nm.

FIG. 2 shows a schematic plan view of silicon carbide semiconductordevice 1 shown in FIG. 1 as seen from gate electrode 17 side. Here, thesurface of source electrode 16 and the surface of gate electrode 17 areformed to extend in a stripe pattern in the <−2110> direction. Further,along the <03-38> direction which is perpendicular to the <−2110>direction, source electrode 16 and gate electrode 17 are alternatelyarranged, and one gate electrode 17 is disposed between two sourceelectrodes 16. Further, from a gap between source electrode 16 and gateelectrode 17, a surface of insulating film 13 is exposed. Thus, wherethe surface of source electrode 16 has the stripe pattern, the channeldirection tends to be set easily in a range of ±10° relative to thedirection orthogonal to the <−2110> direction, in sidewall 19 (crystalplane tilted by an angle in a range of not less than 50° and not morethan 65° relative to the {0001} plane) of trench 20 as described laterherein. In the present invention, the channel direction means thedirection in which carriers move in sidewall 19 of trench 20.

Here, the channel direction of silicon carbide semiconductor device 1with the above-described structure is set to be included in a range of±10° relative to the direction orthogonal to the <−2110> direction, insidewall 19 of trench 20 that is formed of a crystal plane tilted by anangle in a range of not less than 50° and not more than 65° relative tothe {0001} plane.

In the following, a description will be given of an example of themethod of manufacturing silicon carbide semiconductor device 1 havingthe above-described structure. First, as shown in a schematic crosssection of FIG. 3, substrate 11 made of silicon carbide (4H-SiC) havingsurface 11 a formed of a crystal plane that is a {04-4-3} plane forexample is prepared.

Next, as shown in a schematic cross section of FIG. 4, semiconductorlayer 12 is formed on surface 11 a of substrate 11.

Here, semiconductor layer 12 may be formed for example by epitaxialgrowth or the like of semiconductor layer 12 made of n-type siliconcarbide having an n-type impurity with a lower concentration thansubstrate 11, on surface 11 a of substrate 11. Where semiconductor layer12 is formed by the above-described epitaxial growth, surface 12 a ofsemiconductor layer 12 is allowed to have the same crystal plane assurface 11 a of substrate 11. Therefore, if surface 11 a of substrate 11is formed for example of a crystal plane that is a {04-4-3} plane,surface 12 a of semiconductor layer 12 is allowed to have a crystalplane that is a {04-4-3} plane as well, as shown in the schematic planview of FIG. 5 for example.

Next, as shown in a schematic cross section of FIG. 6,second-conductive-type impurity diffusion layer 14 is formed in surface12 a of semiconductor layer 12. In this example, second-conductive-typeimpurity diffusion layer 14 is formed in a stripe pattern extending inthe <−2110> direction. Second-conductive-type impurity diffusion layer14, however, is not limited to this form.

Here, second-conductive-type impurity diffusion layer 14 may be formedfor example by ion implantation or the like in which ions of a p-typeimpurity serving as a second-conductive-type impurity are implanted intosurface 12 a of semiconductor layer 12, after an ion implantation blockmask is placed in a region other than the region wheresecond-conductive-type impurity diffusion layer 14 is to be formed insurface 12 a of semiconductor layer 12. As the ion implantation blockmask, an oxide film or the like that has been patterned byphotolithography and etching for example may be used.

Next, as shown in a schematic cross section of FIG. 7,first-conductive-type impurity diffusion layer 15 is formed in a surfaceof second-conductive-type impurity diffusion layer 14 formed in theabove-described manner. In this example, first-conductive-type impuritydiffusion layer 15 is also formed in a stripe pattern extending in the<−2110> direction. First-conductive-type impurity diffusion layer 15,however, is not limited to this form.

Here, first-conductive-type impurity diffusion layer 15 may be formedfor example by ion implantation or the like in which ions of an n-typeimpurity serving as a first-conductive-type impurity are implanted intosurface 12 a of semiconductor layer 12, after an ion implantation blockmask is placed in a region other than the region wherefirst-conductive-type impurity diffusion layer 15 is to be formed insurface 12 a of semiconductor layer 12. As the ion implantation blockmask, an oxide film or the like that has been patterned byphotolithography and etching for example may be used as well.

Next, an activation annealing treatment is performed on semiconductorlayer 12 in which second-conductive-type impurity diffusion layer 14 andfirst-conductive-type impurity diffusion layer 15 have been formed inthe above-described manner. Accordingly, the p-type impurity serving asa second-conductive-type impurity in second-conductive-type impuritydiffusion layer 14 as well as the n-type impurity serving as afirst-conductive-type impurity in first-conductive-type impuritydiffusion layer 15 that have been introduced by the above-described ionimplantation can be activated.

Here, the activation annealing treatment may be performed for example inan argon gas atmosphere by heating semiconductor layer 12 in whichsecond-conductive-type impurity diffusion layer 14 andfirst-conductive-type impurity diffusion layer 15 have been formed, at atemperature of approximately 1700° C. for approximately 30 minutes, forexample.

Next, as shown in a schematic cross section of FIG. 8, trench 20 havingsidewall 19 is formed in surface 12 a of semiconductor layer 12. Trench20 may be formed for example by providing an etching mask in a regionother than the region where trench 20 is to be formed in surface 12 a ofsemiconductor layer 12, and thereafter etching and thereby removing theregion of surface 12 a of semiconductor layer 12 where the etching maskis not provided.

Here, in the case where the channel direction is to be made coincidentwith the direction in which sidewall 19 of trench 20 extends, forexample, it is preferable to specify the direction orthogonal to the<−2110> direction with respect to a defect formed in semiconductor layer12, and form trench 20 as shown for example in a schematic plan view ofFIG. 9 so that the direction in which sidewall 19 of trench 20 extends(the upward direction in FIG. 9) is included in a range of ±10° relativeto the direction orthogonal to the <−2110> direction.

The above is for the following reason. In the process of manufacturingsilicon carbide semiconductor device 1, a defect could be formed at acertain portion of semiconductor layer 12. Therefore, the position ofthe defect formed at a certain portion of semiconductor layer 12 may beused as a reference. Then, where the channel direction is to be madecoincident with the direction in which sidewall 19 of trench 20 extendsfor example, trench 20 can be formed easily so that the direction inwhich sidewall 19 of trench 20 extends is included in a range of ±10°relative to the direction orthogonal to the <−2110> direction.

Further, as shown for example in a schematic perspective view of FIG.10, sidewall 19 of trench 20 is formed of a crystal plane (hatchedportion in FIG. 10) that is tilted at an angle α° in a range of not lessthan 50° and not more than 65° relative to the {0001} plane. Preferably,the crystal plane of sidewall 19 of trench 20 is also tilted at an anglein a range of ±5° relative to the {03-38} plane as shown for example ina schematic cross section of FIG. 11. In the case where sidewall 19 oftrench 20 is a crystal plane tilted at an angle in a range of ±5°relative to the {03-38} plane, electrical characteristics such aschannel mobility of silicon carbide semiconductor device 1 tend to beimproved. In order to further improve electrical characteristics such aschannel mobility of silicon carbide semiconductor device 1, preferablysidewall 19 of trench 20 is a crystal plane tilted at an angle in arange of ±3° relative to the {03-38} plane, and most preferably sidewall19 of trench 20 is the {03-38} plane. As is evident, a crystal planetilted at an angle in a range of ±5° relative to the {03-38} plane and acrystal plane tilted at an angle in a range of ±3° relative to the{03-38} plane each include the {03-38} plane.

Next, as shown in a schematic cross section of FIG. 12, insulating film13 is formed to contact sidewall 19 of trench 20 formed in theabove-described manner. Insulating film 13 can be formed to contactsidewall 19 of trench 20 that extends in the direction as controlled sothat the direction in which sidewall 19 of trench 20 extends is includedin a range of ±10° relative to the direction orthogonal to the <−2110>direction, and thereby set the channel direction in a range of ±10°relative to the direction orthogonal to the <−2110> direction.

Here, as insulating film 13, an oxide film or the like formed forexample by dry oxidation (thermal oxidation) or the like may be used.Specifically, dry oxidation (thermal oxidation) may be performed forexample in oxygen by heating surface 12 a of semiconductor layer 12 inwhich trench 20 has been formed as described above, at a temperature ofapproximately 1200° C. for approximately 30 minutes for example.

Next, a nitrogen annealing treatment is performed on semiconductor layer12 where above-described insulating film 13 has been formed. In thisway, the nitrogen concentration is adjusted so that a maximum value ofthe nitrogen concentration in a region within 10 nm from the interfacebetween sidewall 19 of trench 20 and insulating film 13 is not less than1×10²¹ cm⁻³.

Here, in the above-described nitrogen annealing treatment, semiconductorlayer 12 where above-described insulating film 13 has been formed isheated for example in an atmosphere of a gas containing nitrogen such asnitrogen monoxide (NO) gas at a temperature of approximately 1100° C.for approximately 120 minutes for example. In this way, a maximum valueof the nitrogen concentration in the region within 10 nm from theinterface between sidewall 19 of trench 20 and insulating film 13 can beset to 1×10²¹ cm⁻³ or more.

It is preferable to further perform an inert gas annealing treatment onsemiconductor layer 12 having undergone the above-described nitrogenannealing treatment, in an atmosphere of an inert gas such as argon gasfor example. In the case where the above-described inert gas annealingtreatment is performed on semiconductor layer 12 having undergone theabove-described nitrogen annealing treatment, there is a higher tendencyfor silicon carbide semiconductor device 1 to be able to achieve a highchannel mobility with high reproducibility.

Here, the above-described inert gas annealing treatment may be performedfor example in an argon gas atmosphere by heating semiconductor layer 12having undergone the above-described nitrogen annealing treatment, at atemperature of approximately 1100° C. for approximately 60 minutes forexample.

Next, as shown in a schematic cross section of FIG. 13, a part ofinsulating film 13 formed as described above is removed to patterninsulating film 13.

Here, patterning of insulating film 13 is performed by removing a partof insulating film 13 so that at least a part of the surface offirst-conductive-type impurity diffusion layer 15 in surface 12 a ofsemiconductor layer 12 is exposed.

Further, a part of insulating film 13 may be removed for example byforming, on the surface of insulating film 13, an etching mask patternedby means of photolithography and etching for exposing a part to beremoved of insulating film 13, for example, and thereafter etching andthereby removing the exposed part of insulating film 13.

Next, as shown in FIG. 1, source electrode 16 is formed to contact theexposed surface of first-conductive-type impurity diffusion layer 15 insurface 12 a of semiconductor layer 12 that is exposed from the partwhere insulating film 13 has been removed.

Here, source electrode 16 may be formed for example by performingsputtering for example to form an electrically conductive film made of ametal such as nickel for example, on surface 12 a of semiconductor layer12 exposed after the above-described etching of insulating film 13 andon the surface of the above-described etching mask, and thereafterremoving this etching mask. In other words, the conductive film formedon the surface of the etching mask is removed (lifted off) together withthe etching mask while only the conductive film formed on surface 12 aof semiconductor layer 12 is left to serve as source electrode 16.

Preferably, a heat treatment for achieving alloying is performed onsemiconductor layer 12 on which above-described source electrode 16 hasbeen formed.

Here, the heat treatment for achieving alloying may be performed forexample in an atmosphere of an inert gas such as argon gas by heatingsemiconductor layer 12 on which above-described source electrode 16 hasbeen formed, at a temperature of approximately 950° C. for approximatelytwo minutes for example.

Next, as shown in FIG. 1, gate electrode 17 is formed on a surface ofinsulating film 13. Here, gate electrode 17 may be formed for example byperforming photolithography and etching or the like to form a resistmask having an opening corresponding to a portion where gate electrode17 is to be formed and covering respective entire surfaces of insulatingfilm 13 and source electrode 16, then performing for example sputteringor the like to form an electrically conductive film made of a metal suchas aluminum for example, on the surface of the resist mask and on thesurface of insulating film 13 that is exposed from the opening of theresist mask, and thereafter removing this resist mask. In other words,the conductive film formed on the surface of the resist mask is removed(lifted off) together with the resist mask while only the conductivefilm formed on the surface of insulating film 13 is left to serve asgate electrode 17.

Next, as shown in FIG. 1, drain electrode 18 is formed on the backsurface of substrate 11. Here, drain electrode 18 may be formed forexample by performing for example sputtering or the like to form anelectrically conductive film made of a metal such as nickel for example,on the back surface of substrate 11.

In this way, silicon carbide semiconductor device 1 with the structureshown in FIG. 1 can be manufactured.

In silicon carbide semiconductor device 1 of the present invention, thesurface of source electrode 16 may be formed in a honeycomb pattern anda region except for a partial region surrounding the outer periphery ofsource electrode 16 may be formed as gate electrode 17 as shown forexample in a schematic plan view of FIG. 14.

In the case where the surface of source electrode 16 is formed in ahoneycomb pattern as described above, the surface of each sourceelectrode 16 is formed in the shape of a hexagon. In particular, thesurface of source electrode 16 is preferably formed in the shape of aregular hexagon. In the case where each source electrode 16 has itssurface formed in the shape of a regular hexagon, the possible number ofsilicon carbide semiconductor devices 1 to be formed from substrate 11of the same size can be increased. Therefore, there is a tendency thatsilicon carbide semiconductor device 1 having a high channel mobilitycan be fabricated with higher reproducibility and at a highermanufacturing efficiency. In this case, second-conductive-type impuritydiffusion layer 14 and first-conductive-type impurity diffusion layer 15may also be formed in a hexagonal shape such as regular hexagonal shape.

Other features of silicon carbide semiconductor device 1 having sourceelectrode 16 and gate electrode 17 structured as shown in FIG. 14 may besimilar to the above-described ones.

In silicon carbide semiconductor device 1 structured in theabove-described manner, when a negative voltage is applied to sourceelectrode 16 and a positive voltage is applied to gate electrode 17 anddrain electrode 18 for example, carriers (electrons in theabove-described example) injected from source electrode 16 move to drainelectrode 18 through the surface of first-conductive-type impuritydiffusion layer 15, sidewall 19 of trench 20, the inside ofsemiconductor layer 12, and the inside of substrate 11.

If a negative voltage is applied to source electrode 16 and a positivevoltage is applied to drain electrode 18 while the positive voltage isnot applied to gate electrode 17, carriers (electrons in theabove-described example) injected from source electrode 16 will berestricted in movement in the surface of second-conductive-type impuritydiffusion layer 14 in sidewall 19 of trench 20.

In silicon carbide semiconductor device 1 of the present invention, amaximum value of the nitrogen concentration in a region within 10 nmfrom the interface between sidewall 19 of trench 20 and insulating film13 is not less than 1×10²¹ cm⁻³ as shown for example in FIG. 15.Therefore, in silicon carbide semiconductor device 1 of the presentinvention, the number of interface states that occur when insulatingfilm 13 is formed by dry oxidation (thermal oxidation) or the like atthe interface between sidewall 19 of trench 20 and insulating film 13can be reduced. Accordingly, particularly in a channel directly belowinsulating film 13 (the portion of sidewall 19 of trench 20 contactinginsulating film 13), the carrier mobility (channel mobility) can stablybe improved.

FIG. 15 shows an example of the nitrogen concentration in the vicinityof the interface between sidewall 19 of trench 20 and insulating film 13in silicon carbide semiconductor device 1 with the above-describedstructure. Here, in FIG. 15, the vertical axis represents the nitrogenconcentration (cm⁻³) and the horizontal axis represents the distance(nm) from the interface between sidewall 19 of trench 20 and insulatingfilm 13. Further, in FIG. 15, the portion where the distance (nm) on thehorizontal axis is 0 (nm) represents the interface between sidewall 19of trench 20 and insulating film 13. The extension in the leftwarddirection with respect to the portion of 0 (nm) on the horizontal axisof the distance (nm) represents extension in the direction towardinsulating film 13 side, while the extension in the rightward directionwith respect to the portion of 0 (nm) on the horizontal axis of thedistance (nm) represents extension in the direction toward sidewall 19side of trench 20.

Further, silicon carbide semiconductor device 1 with the above-describedstructure has the channel direction in a range of ±10° relative to thedirection orthogonal to the <−2110> direction in sidewall 19 of trench20. Carriers therefore move smoothly in this channel direction, and thecarrier mobility in this channel direction and electric currentcharacteristics can be improved. Accordingly, the ON resistance ofsilicon carbide semiconductor device 1 can be reduced.

FIG. 16 shows an example of the relation between the channel mobility(relative value) and the angle (°) relative to the <−2110> direction insidewall 19 of trench 20 (in the crystal plane tilted by an angle in arange of not less than 50° and not more than 65° relative to the {0001}plane) of silicon carbide semiconductor device 1 with theabove-described structure. In FIG. 16, the vertical axis represents thechannel mobility (relative value) and the horizontal axis represents theangle (°) relative to the <−2110> direction in sidewall 19 of trench 20.As to the angle (°) on the horizontal axis in FIG. 16, the angle is notdistinguished in terms of the direction of tilt relative to the <−2110>direction. Therefore, 80° on the horizontal axis for example representsboth the direction tilted by +80° relative to the <−2110> direction andthe direction tilted by −80° relative to the <−2110> direction.

The channel mobility (relative value) on the vertical axis in FIG. 16 isindicated by a relative value with respect to 1 of the channel mobilityin the direction orthogonal to the <−2110> direction in sidewall 19 oftrench 20. Further, the portion where the angle is 90° on the horizontalaxis in FIG. 16 indicates the direction orthogonal to the <−2110>direction in sidewall 19 of trench 20.

As shown in FIG. 16, it is seen that the channel mobility is highestwhen the channel direction extends in the direction at an angle of 90°relative to the <−2110> direction (the direction orthogonal to the<−2110> direction) in sidewall 19 of trench 20, while the channelmobility tends to be smaller as a deviation is larger from the directionorthogonal to the <−2110> direction in sidewall 19 of trench 20. Thetendency seen from FIG. 16 is also satisfied by any crystal plane ofsidewall 19 of trench 20 that is tilted at an angle in a range of notless than 50° and not more than 65° relative to the {0001} plane.

Thus, in order to achieve a high channel mobility, it would be mostpreferable to have the channel direction orthogonal to the <−2110>direction in sidewall 19 of trench 20 (crystal plane tilted at an anglein a range of not less than 50° and not more than 65° relative to the{0001} plane) (namely the direction of ±0° orthogonal to the <−2110>direction).

However, as shown in FIG. 16, in the case where the channel direction isa direction at an angle of not less than 80° and not more than 90°relative to the <−2110> direction in sidewall 19 of trench 20 (namely adirection in a range of ±10° relative to the direction orthogonal to the<−2110> direction), the channel mobility (relative value) is higher than0.99. Therefore, even when the channel mobility varies to a certainextent due to a problem or the like in manufacture, the channel mobilitywould unlikely to be deteriorated to a large extent.

As seen from the above, in silicon carbide semiconductor device 1 of thepresent invention having a channel direction in a range of ±10° relativeto the direction orthogonal to the <−2110> direction in sidewall 19 oftrench 20, a high channel mobility can be achieved with highreproducibility. Further, in order to achieve a high channel mobilitywith high reproducibility in silicon carbide semiconductor device 1 ofthe present invention, it is most preferable that the channel directionis set in the direction orthogonal to the <−2110> direction in sidewall19 of trench 20 as described above.

While the above description refers to the n-type as the first conductivetype and the p-type as the second conductive type, the present inventionmay be constructed so that the first conductive type is the p-type andthe second conductive type is the n-type in the structure of theabove-described silicon carbide semiconductor device 1.

EXAMPLES

Fabrication of Vertical Trench Gate MOSFET

A silicon carbide semiconductor device was formed as a vertical trenchgate MOSFET of an Example in the following way.

First, as shown in FIG. 3, substrate 11 formed of an n-type siliconcarbide crystal (4H-SiC) with a thickness of 400 μm was prepared. Here,substrate 11 had surface 11 a formed of a crystal plane that is a{04-4-3} plane.

Next, as shown in FIG. 4, semiconductor layer 12 (n-type impurityconcentration: 5×10¹⁵ cm⁻³) formed of an n-type silicon carbide crystaldoped with nitrogen as an n-type impurity was epitaxially grown to athickness of 10 μm on surface 11 a of substrate 11 by means of CVD(Chemical Vapor Deposition).

Here, surface 12 a of semiconductor layer 12 was formed of a crystalplane that is a {04-4-3} plane having the <−2110> direction and the<03-38> direction orthogonal to the <−2110> direction as shown in FIG.5.

Next, as shown in FIG. 6, second-conductive-type impurity diffusionlayer 14 (p-type impurity concentration: 1×10¹⁷ cm⁻³) was formed insurface 12 a of semiconductor layer 12. Here, second-conductive-typeimpurity diffusion layer 14 was formed by using photolithography andetching to form a patterned oxide film in a region other than the regionwhere second-conductive-type impurity diffusion layer 14 was to beformed in surface 12 a of semiconductor layer 12, and implanting ions ofboron as a p-type impurity using the oxide film as an ion implantationblock mask. Second-conductive-type impurity diffusion layer 14 wasformed in a stripe pattern extending in the <−2110> direction.

Next, as shown in FIG. 7, in a surface of second-conductive-typeimpurity diffusion layer 14 formed in the above-described manner,first-conductive-type impurity diffusion layer 15 (n-type impurityconcentration: 5×10¹⁹ cm⁻³) and a p+-type region (not shown) (p-typeimpurity concentration: 3×10¹⁹ cm⁻³) were formed. Here,first-conductive-type impurity diffusion layer 15 was formed in a stripepattern extending in the <−2110> direction, and the p+-type region wasformed in a stripe pattern extending in the <−2110> direction on theoutside of first-conductive-type impurity diffusion layer 15 shown inFIG. 7 to contact first-conductive-type impurity diffusion layer 15.

First-conductive-type impurity diffusion layer 15 was formed by usingphotolithography and etching to form a patterned oxide film in a regionother than the region where first-conductive-type impurity diffusionlayer 15 was to be formed in surface 12 a of semiconductor layer 12, andimplanting ions of phosphorous as an n-type impurity using the oxidefilm as an ion implantation block mask. The p+-type region was alsoformed by using photolithography and etching to form a patterned oxidefilm in a region other than the region where the p+-type region was tobe formed in surface 12 a of semiconductor layer 12, and implanting ionsof boron as a p-type impurity using the oxide film as an ionimplantation block mask.

Next, an activation annealing treatment was performed by heatingsemiconductor layer 12 in which second-conductive-type impuritydiffusion layer 14, first-conductive-type impurity diffusion layer 15,and the p+-type region were formed in the above-described manner, in anargon gas atmosphere at 1700° C. for 30 minutes.

Next, as shown in FIG. 8, trench 20 having sidewall 19 was formed insurface 12 a of semiconductor layer 12. Trench 20 may be formed forexample by providing an etching mask in a region other than the regionwhere trench 20 was to be formed in surface 12 a of semiconductor layer12, and thereafter performing etching perpendicularly to surface 12 a ofsemiconductor layer 12 to remove the region where the etching mask wasnot provided and thus trench 20 was to be formed in surface 12 a ofsemiconductor layer 12. Here, trench 20 was formed in the following way.A defect formed in semiconductor layer 12 was used as a reference tospecify the direction orthogonal to the <-2110> direction. As shown inFIG. 9, in order to allow the channel direction to be coincident withthe direction in which sidewall 19 of trench 20 extends, trench 20 wasformed so that the direction of extension of sidewall 19 of trench 20was included in a range of ±10° relative to the direction orthogonal tothe <−2110> direction. Accordingly, sidewall 19 of trench 20 was formedof the {03-38} plane which was a crystal plane tilted at an angle ofabout 55° relative to the {0001} plane. Further, sidewall 19 of trench20 extended perpendicularly to surface 12 a ({04-4-3} plane) ofsemiconductor layer 12.

Next, as shown in FIG. 12, surface 12 a of semiconductor layer 12 washeated in oxygen at 1200° C. for 30 minutes to be dry-oxidized(thermally oxidized) and thereby form insulating film 13 contacting thewhole of surface 12 a of semiconductor layer 12.

Next, a nitrogen annealing treatment was performed by heatingsemiconductor layer 12 on which insulating film 13 had been formed, in anitrogen monoxide (NO) gas atmosphere at 1100° C. for 120 minutes.

Next, an inert gas annealing treatment was performed by heatingsemiconductor layer 12 having undergone the above-described nitrogenannealing treatment, in an argon gas atmosphere at 1100° C. for 60minutes.

Next, as shown in FIG. 13, insulating film 13 was patterned by removinga part of insulating film 13 so that a part of the surface offirst-conductive-type impurity diffusion layer 15 and the surface of thep+-type region (not shown) in surface 12 a of semiconductor layer 12were exposed. Here, patterning of insulating film 13 was performed byforming, on the surface of insulating film 13, an etching mask patternedby photolithography and etching in order to expose a part-to-be-removedof insulating film 13, and thereafter etching and thereby removing theexposed part of insulating film 13.

Next, on the surface of first-conductive-type impurity diffusion layer15 and the surface of the p+-type region (not shown) that have beenexposed from the portion where insulating film 13 was removed, sourceelectrode 16 was formed that was made of nickel and having its surfacein the shape of a regular hexagon as shown in FIG. 14 and a thickness of0.1 μm.

Next, semiconductor layer 12 on which above-described source electrode16 had been formed was heat-treated for alloying, by being heated in anargon gas atmosphere at 950° C. for two minutes.

Next, on the surface of insulating film 13, gate electrode 17 was formedthat was made of aluminum and having a surface shape as shown in FIG. 14and a thickness of 1 μm.

Next, on the whole of the rear surface of substrate 11, drain electrode18 of nickel with a thickness of 0.1 μm was formed.

In this way, silicon carbide semiconductor device 1 was fabricated as avertical trench gate MOSFET of the Example.

Silicon carbide semiconductor device 1 to serve as a vertical trenchgate MOSFET of the Example fabricated in the above-described manner hada channel length (the length, along the direction in which sidewall 19extends, of first-conductive-type impurity diffusion layer 15 exposed onsidewall 19 of trench 20) was set to 2 μm.

Further, for comparison's sake, a silicon carbide semiconductor deviceto serve as a vertical trench gate MOSFET of a Comparative Example wasfabricated in a manner similar to the above-described one, except thatthe channel direction of sidewall 19 of trench 20 in surface 12 a wasthe <−2110> direction.

Evaluation of Vertical Trench Gate MOSFET

For the vertical trench gate MOSFETs of the Example and the ComparativeExample fabricated in the above-described manner, the distribution, inthe depth direction, of the nitrogen concentration in the vicinity ofthe interface between sidewall 19 of trench 20 and insulating film 13was measured by SIMS (secondary ion mass spectrometry).

As a result, it was found that the maximum value of the nitrogenconcentration in the vicinity of the interface between sidewall 19 oftrench 20 and insulating film 13 was 1×10²¹ cm⁻³ or more in both ofrespective vertical trench gate MOSFETs of the Example and theComparative Example. It was thus confirmed that the maximum value of thenitrogen concentration in a region within 10 nm from the interfacebetween sidewall 19 of trench 20 and insulating film 13 was not lessthan 1×10²¹ cm⁻³ in each of respective vertical trench gate MOSFETs ofthe Example and the Comparative Example.

Further, for the vertical trench gate MOSFETs of the Example and theComparative Example, the channel mobility was evaluated. For evaluatingthe channel mobility, the following method was used. First, under thecondition that the source-drain voltage was VDS=0.1 V, a gate voltage VGwas applied to measure a source-drain current IDS (to measure the gatevoltage dependency). Then, Expression (1) below where gm=(δIDS)/(δVG)was used to determine the maximum value of the channel mobility for thegate voltage, and the maximum value was calculated as the channelmobility.

Channel mobility μ=gm×(L×d)/(W×ε×VDS)   (1)

In Expression (1) above, L represents the channel length, d representsthe thickness of insulating film 13, W represents the channel width, andε represents the dielectric constant of insulating film 13.

Consequently, it was found that the channel mobility of the verticaltrench gate MOSFET of the Example was 100 cm²/Vs and the channelmobility of the vertical trench gate MOSFET of the Comparative Examplewas 40 cm²/Vs.

As seen from the above, the channel mobility of the vertical trench gateMOSFET of the Example was 2.5 times as high as the channel mobility ofthe vertical trench gate MOSFET of the Comparative Example, andaccordingly the source-drain current value was 2.5 times. Thus, asignificant reduction in ON resistance was confirmed.

It is therefore considered that in the structure of the vertical trenchgate MOSFET of the Example, the channel mobility is unlikely toconsiderably decrease even when the channel mobility varies depending onproblems in manufacture, and thus a high channel mobility can beachieved with high reproducibility.

It should be construed that embodiments and examples disclosed hereinare by way of illustration in all respects, not by way of limitation. Itis intended that the scope of the present invention is defined byclaims, not by the description above, and encompasses all modificationsand variations equivalent in meaning and scope to the claims.

INDUSTRIAL APPLICABILITY

Since the present invention can provide a silicon carbide semiconductordevice that can achieve a high channel mobility with highreproducibility as well as a method of manufacturing the same, thepresent invention is suitably applicable for example to a verticaltrench gate MOSFET and the like in which SiC is used.

Description of the Reference Signs

1 silicon carbide semiconductor device; 11 substrate; 11 a surface; 12semiconductor layer; 12 a surface; 13 insulating film; 14second-conductive-type impurity diffusion layer; 15first-conductive-type impurity diffusion layer; 16 source electrode; 17gate electrode; 18 drain electrode; 19 sidewall; 20 trench.

1-9. (canceled)
 10. A method of manufacturing a silicon carbidesemiconductor device, comprising the steps of: forming an insulatingfilm contacting a semiconductor layer made of silicon carbide; andadjusting a nitrogen concentration so that a maximum value of thenitrogen concentration in a region within 10 nm from an interfacebetween said semiconductor layer and said insulating film is not lessthan 1×10²¹ cm⁻³.
 11. The method of manufacturing a silicon carbidesemiconductor device according to claim 10, further comprising the stepof annealing said semiconductor layer in an atmosphere of an inert gasafter said adjusting.
 12. The method of manufacturing a silicon carbidesemiconductor device according to claim 11, further comprising the stepof forming a gate electrode on said insulating film after saidannealing.
 13. The method of manufacturing a silicon carbidesemiconductor device according to claim 11, further comprising the stepof forming an electrode to contact said semiconductor layer after saidannealing.
 14. The method of manufacturing a silicon carbidesemiconductor device according to claim 13, wherein said electrode is asource electrode.
 15. The method of manufacturing a silicon carbidesemiconductor device according to claim 11, wherein said inert gasincludes an argon gas.
 16. The method of manufacturing a silicon carbidesemiconductor device according to claim 11, wherein said annealing isperformed at a temperature of approximately 1100° C.
 17. The method ofmanufacturing a silicon carbide semiconductor device according to claim10, wherein said step of adjusting the nitrogen concentration includesthe step of performing a heat treatment in an atmosphere of a gascontaining nitrogen, on said semiconductor layer where said insulatingfilm is formed.
 18. The method of manufacturing a silicon carbidesemiconductor device according to claim 10, further comprising the stepof forming a trench having a sidewall, wherein said step of forming theinsulating film is performed so that said insulating film contacts saidsidewall of said trench.